Traduction et analyse de mots par intelligence artificielle ChatGPT
Sur cette page, vous pouvez obtenir une analyse détaillée d'un mot ou d'une phrase, réalisée à l'aide de la meilleure technologie d'intelligence artificielle à ce jour:
- comment le mot est utilisé
- fréquence d'utilisation
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R F diode - traduction vers russe
общая лексика
высокочастотный диод
![1N5819]])<ref name=SS14/>](https://commons.wikimedia.org/wiki/Special:FilePath/SS14 1A DO-214 Schottky diode.jpg?width=200 "1N5819]])<ref name=SS14/>")
![1N5822 Schottky diode with cut-open packaging. The semiconductor in the center makes a [[Schottky barrier]] against one metal electrode (providing rectifying action) and an [[ohmic contact]] with the other electrode.](https://commons.wikimedia.org/wiki/Special:FilePath/Schottky Diode Section.JPG?width=200 "1N5822 Schottky diode with cut-open packaging. The semiconductor in the center makes a [[Schottky barrier]] against one metal electrode (providing rectifying action) and an [[ohmic contact]] with the other electrode.")
общая лексика
диод с барьером Шоттки
![V}} curve of 10 mA germanium tunnel diode, taken on a Tektronix model 571 [[curve tracer]].](https://commons.wikimedia.org/wiki/Special:FilePath/I-V curve of 10mA germanium tunnel diode..jpg?width=200 "V}} curve of 10 mA germanium tunnel diode, taken on a Tektronix model 571 [[curve tracer]].")
 8.5.7.1.c.svg?width=200 "100px")
![10 mA germanium tunnel diode mounted in test fixture of Tektronix 571 [[curve tracer]]](https://commons.wikimedia.org/wiki/Special:FilePath/TunnelDiode 10mA germanium.jpg?width=200 "10 mA germanium tunnel diode mounted in test fixture of Tektronix 571 [[curve tracer]]")
[tʌnl'daiəud]
общая лексика
тоннельный диод
электроника
туннельный диод
Définition
Wikipédia
An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher. The main advantage is their high-power capability; single IMPATT diodes can produce continuous microwave outputs of up to 3 kilowatts, and pulsed outputs of much higher power. These diodes are used in a variety of applications from low-power radar systems to proximity alarms. A major drawback of IMPATT diodes is the high level of phase noise they generate. This results from the statistical nature of the avalanche process.
